Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

Thermodynamic calculations were performed to determine the optimal conditions for growth of germanium epitaxial layers from a Ge-Sn solution (system) substrate. The determination was based on change in Gibbs energy values system during crystallization process and size crystal-forming nanoclusters. Based results obtained, we determined obtaining low-dislocation, crystalline perfect liquid tin solution, recommended starting at 923 K finishing 800 K. When temperature drops below K, formation Ge1-xSnx observed.